100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier

MW7IC008N
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.
The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers most narrow bandwidth communication application formats.

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Product Details

Features

  • Broadband, Single Matching Network from 20 to 1000 MHz
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13-inch Reel.

Part numbers include: MW7IC008N.

RF Performance Table

100-900 MHz

Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA
Frequency Gps
(dB)		 PAE
(%)
100 MHz @ 11 W CW23.555
400 MHz @ 9 W CW22.541
900 MHz @ 6.5 W CW23.534
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.5 Watts CW (3 dB Input Overdrive from Rated Pout)
  • Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 8 Watts CW Pout @ 900 MHz
  • Typical Pout @ 1 dB Compression Point ≃ 11 Watts CW @ 100 MHz, 9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz

Documentation

Quick reference to our documentation types.

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5 documents

Design Resources

Design Files

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4 design files

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