A2T09VD300N: 716-960 MHz, 79 W Avg, 48 V Airfast® RF Power LDMOS Transistor
Key Parametrics
-
- Frequency (Min) (MHz)
- 716
-
- Frequency (Max) (MHz)
- 960
-
- Supply Voltage (Typ) (V)
- 48
-
- P1dB (Typ) (dBm)
- 54
-
- P1dB (Typ) (W)
- 250
-
- P3dB (Typ) (dBm)
- 56
-
- P3dB (Typ) (W)
- 398
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 79.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 21.5 @ 920
-
- Efficiency (Typ) (%)
- 34.4
-
- Thermal Resistance (Spec) (℃/W)
- 0.66
-
- Matching
- input impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ(A+B) = 1200 mA, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 920 MHz | 21.5 | 34.4 | 7.1 | –34.6 | –13 |
| 940 MHz | 21.6 | 34.7 | 7.0 | –33.5 | –14 |
| 960 MHz | 21.5 | 34.7 | 6.8 | –33.6 | –14 |
800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ(A+B) = 1200 mA, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 790 MHz | 21.4 | 35.3 | 7.2 | –35.1 | –18 |
| 806 MHz | 21.6 | 35.7 | 7.1 | –34.5 | –19 |
| 821 MHz | 21.6 | 36.0 | 6.9 | –34.3 | –16 |