A2V09H525-04N: 720-960 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-1230-4L

OM-1230-4L

Key Parametrics

  • Frequency (Min) (MHz)
    720
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    58.8
  • P3dB (Typ) (W)
    759
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    120.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.9 @ 940
  • Efficiency (Typ) (%)
    56.7
  • Thermal Resistance (Spec) (℃/W)
    0.23
  • Matching
    input impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Tables

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 688 mA, VGSB = 1.1 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz18.957.87.5–28.9
940 MHz18.956.77.3–32.4
960 MHz18.754.86.9–34.8

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 0.9 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
758 MHz18.156.27.5–28.2
780 MHz18.154.77.5–29.3
803 MHz17.752.57.2–32.5