AFT09S282N: 720-960 MHz, 80 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-780-2 Package Image

OM-780-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    720
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    54.5
  • P1dB (Typ) (W)
    280
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    80.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    20.0 @ 960
  • Efficiency (Typ) (%)
    36.1
  • Thermal Resistance (Spec) (℃/W)
    0.31
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.