MRF8S7120N: 728-768 MHz, 32 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Overview

Features

OM-780-2 Package Image

OM-780-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    728
  • Frequency (Max) (MHz)
    768
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    51
  • P1dB (Typ) (W)
    125
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    32.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.2 @ 768
  • Efficiency (Typ) (%)
    38.1
  • Thermal Resistance (Spec) (℃/W)
    0.65
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
72819.236.66.3–38.3
74819.237.16.4–38.2
76819.238.16.3–37.6
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 178 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 125 Watts CW