MRF8S7235N: 728-768 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Overview

Features

OM-780-2 Package Image

OM-780-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    728
  • Frequency (Max) (MHz)
    768
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    54.1
  • P1dB (Typ) (W)
    260
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    63.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    20.0 @ 728
  • Efficiency (Typ) (%)
    36.1
  • Thermal Resistance (Spec) (℃/W)
    0.33
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
72820.036.16.3–38.1
74820.236.06.4–39.0
76820.135.96.4–38.7
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 360 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 260 Watts CW