MW7IC915N: 728-960 MHz, 1.6 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifier

Overview

Features

PQFN 8x8 Package Image

PQFN 8x8 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    865
  • Frequency (Max) (MHz)
    895
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    41.9
  • P1dB (Typ) (W)
    15.5
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1.6 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    38.0 @ 880
  • Efficiency (Typ) (%)
    17.4
  • Thermal Resistance (Spec) (℃/W)
    3.2
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

800 MHz

Typical Single-Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
865 MHz37.917.1–50.4
880 MHz38.017.4–50.6
895 MHz37.817.5–51.3
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 23.5 Watts CW (3 dB Input Overdrive from Rated Pout)
  • Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 30 to 41.5 dBm CW Pout.
  • Typical Pout @ 1 dB Compression Point 15.5 Watts CW

700 MHz

Typical Single-Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
728 MHz37.817.2–49.5
748 MHz37.817.3–50.5
768 MHz37.717.3–51.4