A2T08VD020N: 728-960 MHz, 2 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Overview

Features

PQFN 8x8 Package Image

PQFN 8x8 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    728
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • P1dB (Typ) (dBm)
    42.7
  • P1dB (Typ) (W)
    18.6
  • P3dB (Typ) (dBm)
    43.4
  • P3dB (Typ) (W)
    21.9
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    2.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.1 @ 960
  • Efficiency (Typ) (%)
    21.1
  • Thermal Resistance (Spec) (℃/W)
    3.7
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.