MRF8P9040N: 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE RF Power LDMOS Transistors

Overview

Features

TO-272 WB-4, TO-270 WB-4, TO-270 WB-4 Gull Package Image

TO-272 WB-4, TO-270 WB-4, TO-270 WB-4 Gull Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    728
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    46.2
  • P1dB (Typ) (W)
    42
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    4.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.1 @ 960
  • Efficiency (Typ) (%)
    19.9
  • Thermal Resistance (Spec) (℃/W)
    1.5
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Driver Application — 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
ACPR
(dBc)
920 MHz18.918.9–49.6
940 MHz19.119.5–50.1
960 MHz19.119.9–48.8
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 42 Watts CW

Driver Application — 700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
ACPR
(dBc)
728 MHz19.918.7–49.9
748 MHz20.119.1–50.0
768 MHz20.019.5–49.9