MRF8P8300H: 790-820 MHz, 96 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-1230H-4S, NI-1230S-4S Product Images

NI-1230H-4S, NI-1230S-4S Product Images

Key Parametrics

  • Frequency (Min) (MHz)
    790
  • Frequency (Max) (MHz)
    820
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    55.3
  • P1dB (Typ) (W)
    340
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    96.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    20.9 @ 820
  • Efficiency (Typ) (%)
    35.7
  • Thermal Resistance (Spec) (℃/W)
    0.26
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

790-820 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
790 MHz20.935.26.2–38.1
805 MHz21.035.56.2–38.1
820 MHz20.935.76.1–38.2
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 340 Watts CW