AFT09S220-02N: 850-960 MHz, 54 W Avg, 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-780-2L Package Image

OM-780-2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    850
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    53.4
  • P1dB (Typ) (W)
    220
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    54.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.5 @ 920
  • Efficiency (Typ) (%)
    35.8
  • Thermal Resistance (Spec) (℃/W)
    0.3
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 54 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

880 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 54 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.