MRF8S9102N: 865-960 MHz, 28 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
Key Parametrics
-
- Frequency (Min) (MHz)
- 865
-
- Frequency (Max) (MHz)
- 960
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 50
-
- P1dB (Typ) (W)
- 100
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 28.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 23.1 @ 920
-
- Efficiency (Typ) (%)
- 36.4
-
- Thermal Resistance (Spec) (℃/W)
- 0.63
-
- Matching
- input and output impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 920 MHz | 23.1 | 36.4 | 6.3 | –35.5 |
| 940 MHz | 23.1 | 36.4 | 6.2 | –36.1 |
| 960 MHz | 22.8 | 36.6 | 6.1 | –35.8 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW
800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 865 MHz | 22.9 | 35.4 | 6.4 | –34.7 |
| 880 MHz | 23.0 | 35.5 | 6.2 | –35.1 |
| 895 MHz | 22.8 | 35.6 | 6.0 | –35.7 |