MRF8S9102N: 865-960 MHz, 28 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Overview

Features

OM-780-2 Package Image

OM-780-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    865
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    50
  • P1dB (Typ) (W)
    100
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    28.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    23.1 @ 920
  • Efficiency (Typ) (%)
    36.4
  • Thermal Resistance (Spec) (℃/W)
    0.63
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 100 Watts CW

800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.