MRF8S9120N: 865-960 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Overview

Features

OM-780-2 Package Image

OM-780-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    865
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    50.8
  • P1dB (Typ) (W)
    120
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    33.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.8 @ 960
  • Efficiency (Typ) (%)
    34.2
  • Thermal Resistance (Spec) (℃/W)
    0.62
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz20.134.66.3–37.2
940 MHz20.034.36.3–37.3
960 MHz19.834.26.3–37.4
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 120 Watts CW

800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz20.835.06.2–37.1
880 MHz20.835.06.2–37.5
895 MHz20.634.86.2–38.0