MRFE6S9160H: 865-960 MHz, 35 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    865
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    52
  • P1dB (Typ) (W)
    160
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    35.0 @ AVG
  • Test Signal
    N-CDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    21.0 @ 880
  • Efficiency (Typ) (%)
    31
  • Thermal Resistance (Spec) (℃/W)
    0.33
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.