MWE6IC9080N: 865-960 MHz, 80 W CW, 28 V GSM/EDGE RF LDMOS Wideband Integrated Amplifiers
Key Parametrics
-
- Frequency (Min) (MHz)
- 865
-
- Frequency (Max) (MHz)
- 960
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 49.5
-
- P1dB (Typ) (W)
- 90
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 80.0 @ CW
-
- Test Signal
- CW
-
- Power Gain (Typ) (dB) @ f (MHz)
- 28.5 @ 960
-
- Efficiency (Typ) (%)
- 52.3
-
- Thermal Resistance (Spec) (℃/W)
- 0.52
-
- Matching
- input and output impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Tables
900 MHz
Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW| Frequency | Gps (dB) |
PAE (%) |
| 920 MHz | 29.0 | 49.7 |
| 940 MHz | 28.8 | 51.6 |
| 960 MHz | 28.5 | 52.3 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 80 Watts CW Pout
- Typical Pout @ 1 dB Compression Point ≃ 90 Watts CW
900 MHz
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 35 Watts Avg.| Frequency | Gps (dB) |
PAE (%) |
SR1 @ 400 kHz (dBc) |
SR2 @ 600 kHz (dBc) |
EVM (% rms) |
| 920 MHz | 30.0 | 37.0 | –62 | –75 | 0.8 |
| 940 MHz | 30.0 | 37.8 | –62 | –75 | 1.2 |
| 960 MHz | 29.5 | 38.0 | –62 | –75 | 1.5 |