MRF5S9080N: 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Overview

Features

TO-270WB-4, TO-272WB-4 Package Images

TO-270WB-4, TO-272WB-4 Package Images

Key Parametrics

  • Frequency (Min) (MHz)
    869
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    26
  • P1dB (Typ) (dBm)
    49
  • P1dB (Typ) (W)
    80
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    80.0 @ CW
  • Power Gain (Typ) (dB) @ f (MHz)
    18.0 @ 960
  • Efficiency (Typ) (%)
    59
  • Thermal Resistance (Spec) (℃/W)
    0.5
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.