AFT09S200W02S: 920-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-2 Package Image

NI-780S-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    920
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    51.7
  • P1dB (Typ) (W)
    148
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    56.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.4 @ 960
  • Efficiency (Typ) (%)
    35.6
  • Thermal Resistance (Spec) (℃/W)
    0.34
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.