MRF8S9200N: 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
Key Parametrics
-
- Frequency (Min) (MHz)
- 920
-
- Frequency (Max) (MHz)
- 960
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 53
-
- P1dB (Typ) (W)
- 200
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 58.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 19.9 @ 940
-
- Efficiency (Typ) (%)
- 37.1
-
- Thermal Resistance (Spec) (℃/W)
- 0.3
-
- Matching
- input and output impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Table
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 920 MHz | 19.9 | 37.7 | 6.1 | –36.2 |
| 940 MHz | 19.9 | 37.1 | 6.1 | –36.6 |
| 960 MHz | 19.5 | 36.8 | 6.0 | –36.0 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 300 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 200 Watts CW