MRF8S9202N: 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Overview

Features

OM-780-2, OM-780-2 Gull Package Image

OM-780-2, OM-780-2 Gull Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    920
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    53
  • P1dB (Typ) (W)
    200
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    58.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.0 @ 920
  • Efficiency (Typ) (%)
    36.3
  • Thermal Resistance (Spec) (℃/W)
    0.31
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz19.036.36.3–38.2
940 MHz19.137.26.2–38.0
960 MHz18.937.36.1–37.1
  • Capable of Handling 7:1 VSWR, @ 32 Vdc, 920 MHz, 290 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 200 Watts CW