MRF8S9220H: 920-960 MHz, 65 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image
  • NI-780, NI-780S Package Image
    NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    920
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    53.4
  • P1dB (Typ) (W)
    220
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    65.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    19.4 @ 960
  • Efficiency (Typ) (%)
    35.7
  • Thermal Resistance (Spec) (℃/W)
    0.39
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 65 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
920 MHz19.735.16.1–37.4
940 MHz19.835.36.2–37.5
960 MHz19.435.76.1–37.4
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 317 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point ≃ 220 Watts CW