MRF8S9100H: 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-780, NI-780S Package Image

NI-780, NI-780S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    920
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    50.3
  • P1dB (Typ) (W)
    108
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    72.0 @ CW
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    19.3 @ 920
  • Efficiency (Typ) (%)
    51.6
  • Thermal Resistance (Spec) (℃/W)
    0.65
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

900 MHz

Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW
Frequency Gps
(dB)
ηD
(%)
920 MHz19.351.6
940 MHz19.352.9
960 MHz19.154.1
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 108 Watts CW

900 MHz

Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg.
Frequency Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
920 MHz19.143–64.1–74.51.8
940 MHz19.144–63.6–74.62.0
960 MHz19.045–62.8–75.12.3