MRF8S9260H: 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Overview

Features

NI-880, NI-880S Package Image

NI-880, NI-880S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    920
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    54.1
  • P1dB (Typ) (W)
    260
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    75.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.6 @ 960
  • Efficiency (Typ) (%)
    38.5
  • Thermal Resistance (Spec) (℃/W)
    0.37
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz18.836.06.3–39.5
940 MHz18.737.06.2–38.6
960 MHz18.638.55.9–37.1
  • Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
  • Typical Pout @ 1 dB Compression Point 260 Watts CW