A2V09H400-04S 720-960 MHz, 102 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-4L

NI-780S-4L

Key Parametrics

  • Frequency (Min) (MHz)
    720
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    57.1
  • P3dB (Typ) (W)
    512
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    102.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.7 @ 920
  • Efficiency (Typ) (%)
    53.5
  • Thermal Resistance (Spec) (℃/W)
    0.51
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 750 mA, VGSB = 0.8 Vdc, Pout = 102 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz 18.7 53.5 7.2 –29.5
940 MHz 18.9 54.0 7.0 –29.2
960 MHz 18.5 53.4 6.8 –28.8