MHT2012N: 2450 MHz, 12.5 W CW, 28 V RF LDMOS Integrated Power Amplifier

Overview

Features

PQFN 8x8 Package Image

PQFN 8x8 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2400
  • Frequency (Max) (MHz)
    2500
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    41
  • P1dB (Typ) (W)
    12.5
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    12.5 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    30.0 @ 2450
  • Efficiency (Typ) (%)
    51.4
  • Thermal Resistance (Spec) (℃/W)
    4.3
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

Typical Performance

VDD = 28 Vdc, Pin = 11 dBm, IDQ1 = 15 mA, IDQ2 = 75 mA
Frequency
(MHz)
Signal Type Gps
(dB)
PAE
(%)
Pout
(W)
2400CW30.151.313.0
245030.051.412.7
250029.750.511.7