MHT1108N: 2450 MHz, 12.5 W CW, 28 V RF LDMOS Transistor for Consumer and Commercial Cooking

Overview

Features

DFN 4 x 6, 16-Lead

DFN 4 x 6, 16-Lead

Key Parametrics

  • Frequency (Min) (MHz)
    2400
  • Frequency (Max) (MHz)
    2500
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    41
  • P1dB (Typ) (W)
    12.5
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    12.5 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    18.6 @ 2450
  • Efficiency (Typ) (%)
    56.3
  • Thermal Resistance (Spec) (℃/W)
    3.8
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Performance

VDD = 28 Vdc, IDQ = 110 mA
Frequency
(MHz)
Signal Type Gps
(dB)
PAE
(%)
Pout
(W)
2400CW18.555.712.5
245018.656.312.5
250018.154.212.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
2450CW> 10:1
at all Phase Angles
26
(3 dB Overdrive)
32No Device Degradation