MHT1002N: 915 MHz, 350 W CW, 48 V RF LDMOS Transistors for Consumer and Commercial Cooking

Overview

Features

OM-780-4L, OM-780G-4L Package Image

OM-780-4L, OM-780G-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    915
  • Frequency (Max) (MHz)
    915
  • Supply Voltage (Typ) (V)
    48
  • P1dB (Typ) (dBm)
    55.9
  • P1dB (Typ) (W)
    387
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    350.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    20.7 @ 915
  • Efficiency (Typ) (%)
    66.9
  • Thermal Resistance (Spec) (℃/W)
    0.24
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Performance

VDD = 48 Vdc, IDQ(A+B) = 100 mA

Load Mismatch/Ruggedness