1.8-600 MHz, 600 W CW, 50 V Wideband RF Power LDMOS Transistors

MRFE6VP6600N
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

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Product Details

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Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
  • RoHS Compliant
  • Broadcast
    • FM broadcast
    • HF and VHF broadcast
  • Industrial, Scientific, Medical (ISM)
    • CO2 laser generation
    • Plasma etching
    • Particle accelerators (synchrotrons)
    • MRI
    • Industrial heating/welding
  • Aerospace
    • VHF omnidirectional range (VOR)
    • Weather radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

Part numbers include: MRFE6VP6600GN, MRFE6VP6600N.

RF Performance Tables

Typical Performance

VDD = 50 Vdc

Load Mismatch/Ruggedness

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband production test circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.

Documentation

Quick reference to our documentation types.

5 documents

Design Resources

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Design Files

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