MRFE6VP6600N: 1.8-600 MHz, 600 W CW, 50 V Wideband RF Power LDMOS Transistors

Overview

Features

OM-780-4L, OM-780G-4L Package Image

OM-780-4L, OM-780G-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    57.8
  • P1dB (Typ) (W)
    600
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    600.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    24.0 @ 98
  • Efficiency (Typ) (%)
    81
  • Thermal Resistance (Spec) (℃/W)
    0.033
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc

Load Mismatch/Ruggedness

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband production test circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.