MRFX1K80N: 1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

Overview

Features

OM-1230-4L, OM-1230G-4L

OM-1230-4L, OM-1230G-4L

MRFX1K80N RF Power Transistor Offered in Plastic Package

MRFX1K80N RF Power Transistor Offered in Plastic Package thumbnail

The Five Benefits of NXP 65 V LDMOS

The Five Benefits of NXP 65 V LDMOS thumbnail

NXP 65 V LDMOS Design Reuse

NXP 65 V LDMOS Design Reuse thumbnail

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    400
  • Supply Voltage (Typ) (V)
    65
  • P1dB (Typ) (dBm)
    62.6
  • P1dB (Typ) (W)
    1800
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    24.4 @ 230
  • Efficiency (Typ) (%)
    75.7
  • Thermal Resistance (Spec) (℃/W)
    0.06
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Performance

Frequency
(MHz)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
87.5-108 (1,2)CW601670 CW23.883.5
230 (3)Pulse
(100 µsec, 20% Duty Cycle)
651800 Peak24.475.7

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
230(3) Pulse
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles 14 Peak
(3 dB Overdrive)
65 No Device Degradation
1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz narrowband production test fixture.