MRFX1K80N: 1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

Overview

Features

OM-1230-4L, OM-1230G-4L

OM-1230-4L, OM-1230G-4L

MRFX1K80N RF Power Transistor Offered in Plastic Package

MRFX1K80N RF Power Transistor Offered in Plastic Package thumbnail

The Five Benefits of NXP 65 V LDMOS

The Five Benefits of NXP 65 V LDMOS thumbnail

NXP 65v LDMOS Design Reuse

NXP 65v LDMOS Design Reuse thumbnail

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    400
  • Supply Voltage (Typ) (V)
    65
  • P1dB (Typ) (dBm)
    62.6
  • P1dB (Typ) (W)
    1800
  • Test Signal
    Pulse
  • Efficiency (Typ) (%)
    75.7
  • Thermal Resistance (Spec) (℃/W)
    0.06
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

What's New

News

NXP Announces New 65 V

LDMOS Technology that Speeds RF Power Design.

Video

Webinar

Explore the Benefits of 65 V over 50 V LDMOS Technology.