MRFE6P3300H: 470-860 MHz, 300 W, 32 V Lateral N-Channel RF Power MOSFET

Overview

Features

NI-860C3 Package Image

NI-860C3 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    470
  • Frequency (Max) (MHz)
    860
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    270.0 @ PEP
  • Test Signal
    2-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    20.4 @ 860
  • Efficiency (Typ) (%)
    44.8
  • Rth(j-a) (K/W)
    0.23
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS