MRF7S24250N: 250 W CW over 2400-2500 MHz, 32 V RF Power LDMOS Transistor
Key Parametrics
-
- Frequency (Min) (MHz)
- 2400
-
- Frequency (Max) (MHz)
- 2500
-
- Supply Voltage (Typ) (V)
- 32
-
- P1dB (Typ) (dBm)
- 54
-
- P1dB (Typ) (W)
- 250
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 250.0 @ CW
-
- Test Signal
- CW
-
- Power Gain (Typ) (dB) @ f (MHz)
- 14.7 @ 2450
-
- Efficiency (Typ) (%)
- 54.8
-
- Thermal Resistance (Spec) (℃/W)
- 0.26
-
- Matching
- input and output impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Tables
Typical Performance
In 2400–2500 MHz reference circuit, VDD = 32 Vdc| Frequency (MHz) |
Signal Type | Pin (W) |
Gps (dB) |
ηD (%) |
Pout (W) |
| 2400 | CW | 9.0 | 14.5 | 55.5 | 255 |
| 2450 | 9.0 | 14.7 | 54.8 | 263 | |
| 2500 | 9.0 | 14.3 | 55.5 | 242 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 2450 | CW | > 10:1 at all Phase Angles | 14 (3 dB Overdrive) | 32 | No Device Degradation |