MRF7S24250N: 250 W CW over 2400-2500 MHz, 32 V RF Power LDMOS Transistor

Overview

Features

2400-2500 MHz Reference Circuit

2400-2500 MHz Reference Circuit

OM-780-2L

OM-780-2L
  • 2400-2500 MHz Reference Circuit
    2400-2500 MHz Reference Circuit
  • OM-780-2L
    OM-780-2L

2400-2500 MHz Reference Circuit

2400-2500 MHz Reference Circuit

OM-780-2L

OM-780-2L

Key Parametrics

  • Frequency (Min) (MHz)
    2400
  • Frequency (Max) (MHz)
    2500
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    54
  • P1dB (Typ) (W)
    250
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    250.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    14.7 @ 2450
  • Efficiency (Typ) (%)
    54.8
  • Thermal Resistance (Spec) (℃/W)
    0.26
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Performance

In 2400–2500 MHz reference circuit, VDD = 32 Vdc
Frequency
(MHz)		 Signal Type Pin
(W)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
2400CW9.014.555.5255
24509.014.754.8263
25009.014.355.5242

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
2450CW> 10:1
at all Phase Angles		14
(3 dB Overdrive)		32No Device
Degradation