MRF24G300HS: 300 W CW over 2400-2500 MHz, 50 V RF Power GaN Transistor

Overview

Features

NI-780S-4L, NI-780H-4L Package Image

NI-780S-4L, NI-780H-4L Package Image

MRF25G300HS 2450 MHz Reference Circuit

MRF25G300HS 2450 MHz Reference Circuit

Key Parametrics

  • Frequency (Min) (MHz)
    2400
  • Frequency (Max) (MHz)
    2500
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    15.2 @ 2450
  • Efficiency (Typ) (%)
    73
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    GaN
.

RF Performance Tables

Typical Performance

In 2400-2500 MHz MRF24G300HS reference circuit, VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1)
Frequency
(MHz)
Signal Type Pin
(W)
Pout
(W)
Gps
(dB)
ηD
(%)
2400CW10.033615.370.4
245010.033215.273.0
250010.030714.974.4
1. All data measured in fixture with device soldered to heatsink.

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
2450Pulse
(100 µsec, 20% Duty Cycle)
> 20:1
at All Phase Angles
12.6 Peak55No Device Degradation