MRFE8VP8600H: 140 W Avg. over 470-860 MHz, 50 V RF Power LDMOS Transistor

Overview

Features

NI-1230H-4S, NI-1230S-4S Package Image

NI-1230H-4S, NI-1230S-4S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    470
  • Frequency (Max) (MHz)
    860
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    59
  • P1dB (Typ) (W)
    800
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    140.0 @ AVG
  • Test Signal
    OFDM
  • Power Gain (Typ) (dB) @ f (MHz)
    20.0 @ 810
  • Efficiency (Typ) (%)
    34
  • Thermal Resistance (Spec) (℃/W)
    0.16
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

DBV-T Broadband Class AB Performance

VDD = 50 Vdc, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Output PAR
(dB)
DVB-T (8k OFDM) 140 Avg. 47420.229.78.9
61020.734.58.2
81020.034.08.4

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pout
(W)
Test
Voltage
Result
860 DVB-T (8k OFDM) 20:1 at all
Phase Angles
125
(3 dB Overdrive)
50 No Device
Degradation