MRF8VP13350N: 700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors

Overview

Features

OM-780-4L, OM-780G-4L Package Image

OM-780-4L, OM-780G-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    700
  • Frequency (Max) (MHz)
    1300
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    55.4
  • P1dB (Typ) (W)
    350
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    350.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    20.7 @ 915
  • Efficiency (Typ) (%)
    67.5
  • Thermal Resistance (Spec) (℃/W)
    0.04
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

1300 MHz

VDD = 50 Vdc

915 MHz

In 915 MHz reference circuit, VDD = 48 Vdc

Load Mismatch/Ruggedness

1. Measured in 1300 MHz pulse narrowband test circuit.