MRF085H: 85 W CW over 1.8-1215 MHz, 50 V Wideband RF Power LDMOS Transistor

Overview

Features

NI-650H-4L

NI-650H-4L

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    49.3
  • P1dB (Typ) (W)
    85
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    25.6 @ 520
  • Efficiency (Typ) (%)
    73.3
  • Thermal Resistance (Spec) (℃/W)
    0.85
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

Target Applications

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
30-520 (1,2)CW50 CW14.040.0
520 (3)CW85 CW25.673.3

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
520 (3)CW> 65:1
at all Phase Angles
0.56
(3 dB Overdrive)
50No Device Degradation
1. Measured in 30-520 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 520 MHz narrowband test circuit.

Typical Applications

  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Aerospace
    • VHF omnidirectional range (VOR)
    • HF and VHF communications
    • Weather radar
  • Mobile Radio
    • VHF and UHF radios