AFT05MS006N: 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor

Overview

Features

PLD-1.5W Package Image

PLD-1.5W Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    136
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    7.5
  • P1dB (Typ) (dBm)
    37.8
  • P1dB (Typ) (W)
    6
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    6.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    18.3 @ 520
  • Efficiency (Typ) (%)
    73
  • Thermal Resistance (Spec) (℃/W)
    1
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Narrowband Performance

(7.5 Vdc, IDQ = 100 mA, TA = 25°C, CW)

Wideband Performance

(7.5 Vdc, TA = 25°C, CW)

Ruggedness, 520 MHz

1. Measured in 520 MHz narrowband test circuit.
2. Measured in 440-520 MHz UHF broadband reference circuit.
3. Measured in 760-870 MHz UHF broadband reference circuit.