AFT05MS003N: 3 W CW over 1.8-941 MHz, 7.5 V Wideband RF Power LDMOS Transistor

Overview

Features

SOT-89

SOT-89

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    7.5
  • P1dB (Typ) (dBm)
    38.4
  • P1dB (Typ) (W)
    3
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    3.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    20.8 @ 520
  • Efficiency (Typ) (%)
    68.3
  • Thermal Resistance (Spec) (℃/W)
    4.1
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Wideband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Pin
(dBm)
Gps
(dB)
ηD
(%)
Pout
(W)
136-174(1,4)17.817.167.13.2
350-520(2,4)20.015.173.03.2

Narrowband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
520(3)20.868.33.0

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
520(3)CW> 65:1
at all Phase
Angles
21.19.0No
Device
Degradation
1. Measured in 136-174 MHz VHF broadband reference circuit.
2. Measured in 350-520 MHz UHF broadband reference circuit.
3. Measured in 520 MHz narrowband production test circuit.
4. The values shown are the center band performance numbers across the indicated frequency range.