MRF1513NT1: 520 MHz, 3 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET

Overview

Features

PLD 1.5 Package Image

PLD 1.5 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    135
  • Frequency (Max) (MHz)
    520
  • Supply Voltage (Typ) (V)
    12.5
  • P1dB (Typ) (dBm)
    34.8
  • P1dB (Typ) (W)
    3
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    3.0 @ CW
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    15.0 @ 520
  • Efficiency (Typ) (%)
    65
  • Thermal Resistance (Spec) (℃/W)
    4
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.