AFM907N: 8 W CW over 136-941 MHz, 7.5 V Wideband Airfast® RF Power LDMOS Transistor

Overview

Features

DFN 4 x 6, 16-Lead

DFN 4 x 6, 16-Lead

Key Parametrics

  • Frequency (Min) (MHz)
    136
  • Frequency (Max) (MHz)
    941
  • Supply Voltage (Typ) (V)
    7.5
  • P1dB (Typ) (dBm)
    39
  • P1dB (Typ) (W)
    8
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    8.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    20.7 @ 520
  • Efficiency (Typ) (%)
    73.9
  • Thermal Resistance (Spec) (℃/W)
    1.9
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Wideband Performance

(In 350-520 MHz reference circuit, 7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)(1)
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
3500.2515.256.68.4
4350.2515.561.58.9
5200.2515.064.27.9

Narrowband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
520(2)20.773.98.4

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
520(2) CW > 65:1 at all Phase Angles 21
(3 dB Overdrive)
10.8 No Device Degradation
1. Measured in 350-520 MHz UHF broadband reference circuit.
2. Measured in 520 MHz narrowband RF test fixture.