June 10-15 | Philadelphia, PA | NXP Booth #739
Join us at the IEEE MTT-S International Microwave Symposium (IMS) at the Pennsylvania Convention Center, June 10-15 in Philadelphia, Pennsylvania. IMS consists of a full week of events, including technical paper presentations, workshops, and tutorials, as well as numerous social events and networking opportunities. The symposium also hosts a large exhibition featuring current advances in RF technology.
NXP has the broadest portfolio in the industry spanning all major RF-related markets and applications. Visit NXP at booth #739 to see what's new and discuss with our RF experts how to accelerate your RF power design with our industry-leading technology.
|Date||Time, Location||Presentation Title||Session Presenters|
|Sunday, 10 June 2018||6:30 - 7:00 p.m., PCC Ballroom||The Road Ahead for Autonomous Cars — What's in for RFIC||Lars Reger: NXP Semiconductors, Automotive CTO|
|Tuesday, 12 June 2018||8:00 - 9:40 a.m., Room 201A (RTu1A)||mm-Wave Power Amplifiers||Chair: Margaret Szymanowski; NXP Semiconductors
Co-chair: Gary Hau: Qualcomm
|3:55 p.m., Interactive Forum #1 - TUIF1-19 Exhibit Hall||Input Harmonic Sensitivity in High-Efficiency GaN Power Amplifiers||Shishir Shukla; NXP Semiconductors|
|Wednesday, 13 June 2018||8:20 a.m.||Non-Quasi-Static Large-Signal Model for RF LDMOS Power Transistors||Lei Zhang; NXP Semiconductors|
|10:10 a.m.||Digitally-assisted Doherty Power Amplifier: Efficiency Enhancement and Linearity Improvement||Mir Masood; NXP Semiconductors|
|10:10 a.m.||A 150 W High Efficiency Integrated Doherty Amplifier for LTE-Advanced Applications||Alan Xu; NXP Semiconductors|
|3:35 p.m., Session We3A, Room 201A||Linearity Enhancement of GaN Doherty Amplifier by Forward Gate Current Blocking Method||Ibrahim Khalil; NXP Semiconductors|
We look forward to welcoming you at IMS 2018. Contact Chip.Bartelt@nxp.com to request a complimentary exhibitors showroom floor pass.