International Microwave Symposium 2017

Join us at the IEEE MTT-S International Microwave Symposium (IMS) at the Hawai'i Convention Center, June 4-9 in Honolulu, Hawai'i. IMS consists of a full week of events, including technical paper presentations, workshops, panel sessions and tutorials, as well as an exhibition featuring more than 600 microwave vendors. This is the 60th year that MTT-S has organized this symposium.

NXP has the broadest portfolio in the industry spanning all major RF-related markets and applications. Visit NXP at booth #1132 to see what's new and discuss with our RF experts how to accelerate your RF power design with our industry-leading technology.

While at IMS, also plan to attend NXP's rich set of technical presentations and papers. See the schedule below to participate in our sessions.

NXP® at IMS 2017

Booth #1132

RF 5G NXP Fastrack

NXP’s presence at IMS 2017

Come experience NXP's vision for ushering in a new era with 5G at the most prestigious microwave industry gathering in the world. See how we truly enable RF Technology for a Smarter World.


Tuesday, June 6
10:10am – 11:20am, Room 313B
RFIC Technical Session – Power Amplifiers in Advanced Technologies
Chair: Margaret Szymanowski; NXP Semiconductors
This session presents PA designs in cutting edge technologies including GaN, GaAs, SiGe, SOI and FinFET to address 5G and mm-wave systems.
10:10am – 11:50am, Room 316A
Technical Session TU2G: Developments in High Power MMIC Amplifiers
TU2G-3: Two-Stage Integrated Doherty Power Amplifier with Extended Instantaneous Bandwidth for 4/5G Wireless Systems (10:50-11:00)
Seungkee Min, Henry Christange, Margaret Szymanowski; NXP Semiconductors
13:30pm – 15:00pm, Room: Overlook Concourse
Interactive Forum TUIF2-2: Automatic Parametric Model Development Technique for RFIC Inductors with Large Modeling Space
Humayun Kabir, Lei Zhang, Kevin Kim; NXP Semiconductors
Wednesday, June 7
08:00am – 09:40am, Room: 314
Technical Session WE1E: Advanced Doherty PAs
WE1E-6: Harmonically Engineered and Efficiency Enhanced Power Amplifier Design for P3dB/Back-off Applications (09:30-09:40)
Srinidhi Embar R, Damon Holmes, Jeff Jones; NXP Semiconductors
Tushar Sharma, Ramzi Darraji, Fadhel Ghannouchi; University of Calgary;
10:10am – 11:50am, Room 313C
Technical Session WE2D: Advanced Power Amplifier Architectures
Chair: Paul Draxler, Qualcomm Technologies, Inc.; Co-Chair: Damon Holmes, NXP Semiconductors
11:00am – Ansys Booth Presentation
Modeling Space: Multi-technology Power Amplifier Design
15:40pm – 17:00pm, Room 314
Technical Session WE4E: Doherty Power Amplifiers for Wireless Communications
Chair: Ramzi Darraji, University of Calgary; Co-Chair: Joseph Staudinger, NXP Semiconductors
WE4E-3: An Integrated RF Match and Baseband Termination Supporting 395 MHz Instantaneous Bandwidth for High Power Amplifier Applications (16:20-16:40)
Ning Zhu, Roy Mclaren, Damon Holmes, John Holt, Peter Rashev, Jeffrey Jones; NXP Semiconductors
Thursday, June 8
11:40am, Room: Exhibition Floor, Booth 1946
MICROAPPS – The Latest High Voltage LDMOS Technology Delivers Industry's Highest Output Power in a Single Package
Dayong Wang; NXP Semiconductors
13:30pm – 15:10pm, Room: 312
Technical Session TH3A: Next Generation of Design Automation Methods
Chair: José Ernesto Rayas Sánchez, IITESO, the Jesuit University of Guadalajara;
Co-Chair: Vikas Shilimkar, NXP Semiconductors
Friday, June 9
08:00am – Workshop WFO
Modeling Space: Multi-physics Based Microwave Modeling and Design

Featured Demos Snapshot

  • High performance cellular infrastructure products
  • Solutions based on GaN and LDMOS technology
  • 5G Infrastructure for cellular base stations
  • High efficiency, single package GaN and LDMOS final stage solutions for macro base stations
  • High performance multiband integrated drivers for macro base stations
  • New 65 V LDMOS technology with MRFX series 1800 W transistor
  • Module solution for solid-state RF cooking
  • Avionics and S-Band radar solutions