IMS 2018

The International Microwave Symposium

June 10-15 | Philadelphia, PA | NXP Booth #739

Join us at the IEEE MTT-S International Microwave Symposium (IMS) at the Pennsylvania Convention Center, June 10-15 in Philadelphia, Pennsylvania. IMS consists of a full week of events, including technical paper presentations, workshops, and tutorials, as well as numerous social events and networking opportunities. The symposium also hosts a large exhibition featuring current advances in RF technology.

NXP has the broadest portfolio in the industry spanning all major RF-related markets and applications. Visit NXP at booth #739 to see what's new and discuss with our RF experts how to accelerate your RF power design with our industry-leading technology.

While at IMS, also plan to attend NXP's RFIC Plenary session as well as other technical sessions.


Overview of NXP technical presentations at IMS 2018

Date Time, Location Presentation Title Session Presenters
Sunday, 10 June 2018 6:30 - 7:00 p.m., PCC Ballroom The Road Ahead for Autonomous Cars — What's in for RFIC Lars Reger: NXP Semiconductors, Automotive CTO
Tuesday, 12 June 2018 8:00 - 9:40 a.m., Room 201A (RTu1A) mm-Wave Power Amplifiers Chair: Margaret Szymanowski; NXP Semiconductors
Co-chair: Gary Hau: Qualcomm
3:55 p.m., Interactive Forum #1 - TUIF1-19 Exhibit Hall Input Harmonic Sensitivity in High-Efficiency GaN Power Amplifiers Shishir Shukla; NXP Semiconductors
Wednesday, 13 June 2018 8:20 a.m. Non-Quasi-Static Large-Signal Model for RF LDMOS Power Transistors Lei Zhang; NXP Semiconductors
10:10 a.m. Digitally-assisted Doherty Power Amplifier: Efficiency Enhancement and Linearity Improvement Mir Masood; NXP Semiconductors
10:10 a.m. A 150 W High Efficiency Integrated Doherty Amplifier for LTE-Advanced Applications Alan Xu; NXP Semiconductors
3:35 p.m., Session We3A, Room 201A Linearity Enhancement of GaN Doherty Amplifier by Forward Gate Current Blocking Method Ibrahim Khalil; NXP Semiconductors

Young Professionals

Skills that enable impact in microwaves, medicine, and mobility
Tuesday, 12 June 2018
Location: Pennsylvania Convention Center, Room 201A
Time: 5:30 - 7:00 p.m.
Panelists:
    1) Joel Johnson; Harris Corporation
    2) Brian Rautio; Sonnet Software
    3) Mario Bokatius; NXP
    4) Jennifer Kitchen; Arizona State University
    5) Husnu Masaracioglu; Qualcomm

Preview of Featured Demos

  • GaN and LDMOS RF Power solutions for cellular base station applications, including
    • RF front-end solutions for 5G
    • High performance Airfast third-generation LDMOS 28 V products
    • LDMOS 48 V drivers and final stage solutions
    • Ultra wide-band RF solutions
  • System solutions for RF Energy, comprised of a plug and play generator, modules and reference pallets at various power levels and frequencies
  • Latest 65 V LDMOS transistors and reference circuits
  • Latest aerospace and defense transistors and reference circuits
  • New family of TO-247 packaged transistors, providing mounting flexibility for RF power transistors

2018 Exhibits-only Showroom Floor Pass

We look forward to welcoming you at IMS 2018. Contact Chip.Bartelt@nxp.com to request a complimentary exhibitors showroom floor pass.