NPN Wideband Silicon Germanium RF Transistor

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Product Details

Features

  • Leadless ultra small plastic SMD package 1.0 mm x 0.6 mm x 0.34 mm
  • Low noise high gain microwave transistor
  • Noise figure (NF) = 0.75 dB at 6 GHz
  • High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz
  • Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz:
    • input third-order intercept point (IP3i) = 15 dBm
    • input power at 1 dB gain compression (Pi(1dB)) = 0 dBm
  • 110 GHz fT silicon germanium technology

Target Applications

  • Wi-Fi / WLAN
  • WiMAX
  • LNA for GPS, GLONASS, Galileo and Compass (BeiDou)
  • DBS (2nd LNA stage, mixer stage, DRO), SDARS
  • RKE, AMR / Zigbee
  • LNA for microwave communications systems
  • Low current battery equipped applications
  • Microwave driver / buffer applications

Part numbers include: BFU730LX.

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