Package Version | Package Name | Mount | Terminal Position | Package Style | Dimensions | Termination Count | Material |
---|---|---|---|---|---|---|---|
SOT1787-1 | CFM4F | flange mount | double | CFM | 10.16 x 41.15 x 4.575 | 4 | ceramic |
Manufacture Code | Reference Codes | Issue Date |
---|---|---|
98ASB16977C | 2019-10-25 |
Part | Description | Quick access |
---|---|---|
MMRF1317H | RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V | View parametrics |
MMRF1314H | RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V | View parametrics |
MMRF1308H | Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V | View parametrics |
MRFE6VP61K25H | Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V | View parametrics |
MRFE6VP5600H | Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V | View parametrics |
MRF1K50H | Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V | View parametrics |
MMRF1050H | Airfast RF Power LDMOS Transistor, 1050 W Peak over 850-950 MHz, 50 V | View parametrics |
MRFX1K80H | Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V | View parametrics |
MRF13750H | RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V | View parametrics |
AFV141KH | Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V | View parametrics |
AFV121KH | Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V | View parametrics |
MMRF1312H | RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V | View parametrics |
MRF8P29300H | Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V | View parametrics |
MRFE8VP8600H | 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor | View parametrics |