SOT1787-1: CFM4F

Overview

CFM4F, ceramic, flange mount flat package; 4 terminals; 13.72 mm pitch, 10.16 mm x 41.15 mm x 4.575 mm body
Package Version Package Name Mount Terminal Position Package Style Dimensions Termination Count Material
 SOT1787-1 CFM4F flange mount double CFM 10.16 x 41.15 x 4.575 4 ceramic
Manufacture Code Reference Codes Issue Date
98ASB16977C 2019-10-25
Part Description Quick access
MMRF1317H RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V View parametrics
MMRF1314H RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V View parametrics
MMRF1007H Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V View parametrics
MMRF1308H Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V View parametrics
MRFE6VP61K25H Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V View parametrics
MRFE6VP5600H Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V View parametrics
MRF1K50H Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V View parametrics
MMRF1050H Airfast RF Power LDMOS Transistor, 1050 W Peak over 850-950 MHz, 50 V View parametrics
MRFX1K80H Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V View parametrics
AFV141KH Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V View parametrics
MRF13750H RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V View parametrics
AFV121KH Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V View parametrics
MMRF1016H Lateral N-Channel Broadband RF Power MOSFET, 2-500 MHz, 600 W, 50 V View parametrics
MMRF1312H RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V View parametrics
MRF8P29300H Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V View parametrics
MRFE8VP8600H 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor View parametrics