SOT1826-1: CFM4F


Overview

NI-780S-4L
Package Version Package Name Mount Terminal Position Package Style Dimensions Termination Count Material
CFM4F 19.81 x 9.34 x 3.75 5
Manufacture Code Reference Codes Issue Date
98ASA10718D 2017-06-11
Part Description Quick access
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805-2025 MHz, 20 W Avg., 28 V
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 16 W Avg., 28 V
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2500-2700 MHz, 14 W Avg., 28 V
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 30 W Avg., 28 V
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Airfast RF Power GaN Transistor, 1805-2200 MHz, 79 W Avg., 48 V
Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-1920 MHz, 37 W Avg., 28 V
Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V
RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1995 MHz, 37 W Avg., 28 V
Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V
Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 22 W Avg., 28 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2010-2025 MHz, 10 W Avg., 32 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg., 28 V
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 16 W Avg., 28 V
Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V
Airfast RF Power GaN Transistor, 1805-1880 MHz, 107 W Avg., 48 V
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 37 W Avg., 28 V
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V