1805-2200 MHz, 56 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A3G18D510-04S
End of Life

This A3G18D510-04S 56 W symmetrical Doherty RF Power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1805 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

See product image

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHs compliant

RF Performance Tables

2000 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 250 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1805 MHz 16.0 54.3 8.0 –26.4
1995 MHz 16.8 52.2 7.8 –31.9
2170 MHz 15.4 53.9 7.6 –33.8

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N true 0 PSPA3G18D510-04Sen 3 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1598003102416726577010 PSP 220.8 KB None None documents None 1598003102416726577010 /docs/en/data-sheet/A3G18D510-04S.pdf 220826 /docs/en/data-sheet/A3G18D510-04S.pdf A3G18D510-04S documents N N 2020-08-21 A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G18D510-04S.pdf /docs/en/data-sheet/A3G18D510-04S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 16, 2020 980000996212993340 Data Sheet Y N A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Package Information Package Information 1 3 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L false 0 A3G18D510-04S downloads en true 1 Y PSP Y Y Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/A3G18D510-04S.pdf 2020-08-21 1598003102416726577010 PSP 1 Aug 16, 2020 Data Sheet A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A3G18D510-04S.pdf English documents 220826 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3G18D510-04S.pdf A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G18D510-04S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3G18D510-04S 1805-2200 MHz, 56 W Avg, 48 V Data Sheet 220.8 KB A3G18D510-04S N 1598003102416726577010 Package Information 1 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 3 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 true Y Products

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