2110-2170 MHz, 59 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G20S350-01S
Active

This A3G20S350-01S 59 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2110 to 2170 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 500 mA, Pout = 59 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2110 MHz18.037.07.0–33.3
2140 MHz18.036.97.0–33.3
2170 MHz18.137.06.9–32.3

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N true 0 PSPA3G20S350-01Sen 3 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1597335537616702034610 PSP 296.1 KB None None documents None 1597335537616702034610 /docs/en/data-sheet/A3G20S350-01S.pdf 296142 /docs/en/data-sheet/A3G20S350-01S.pdf A3G20S350-01S documents N N 2020-08-13 A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet /docs/en/data-sheet/A3G20S350-01S.pdf /docs/en/data-sheet/A3G20S350-01S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 10, 2020 980000996212993340 Data Sheet Y N A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Package Information Package Information 1 3 O English 1591964026041714427407 PSP 148.0 KB None None documents None 1591964026041714427407 /docs/en/package-information/SOT1828-3.pdf 148009 /docs/en/package-information/SOT1828-3.pdf sot1828-3 documents N N 2020-06-12 98ASA01061D /docs/en/package-information/SOT1828-3.pdf /docs/en/package-information/SOT1828-3.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 5, 2018 302435339416912908 Package Information Y N 98ASA01061D false 0 A3G20S350-01S downloads en true 1 Y PSP Y Y Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/A3G20S350-01S.pdf 2020-08-13 1597335537616702034610 PSP 1 Aug 10, 2020 Data Sheet A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A3G20S350-01S.pdf English documents 296142 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3G20S350-01S.pdf A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet /docs/en/data-sheet/A3G20S350-01S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet 296.1 KB A3G20S350-01S N 1597335537616702034610 Package Information 1 /docs/en/package-information/SOT1828-3.pdf 2020-06-12 1591964026041714427407 PSP 3 Mar 5, 2018 Package Information None /docs/en/package-information/SOT1828-3.pdf English documents 148009 None 302435339416912908 2022-12-07 N /docs/en/package-information/SOT1828-3.pdf 98ASA01061D /docs/en/package-information/SOT1828-3.pdf documents 302435339416912908 Package Information N en None Y pdf O N N 98ASA01061D 148.0 KB sot1828-3 N 1591964026041714427407 true Y Products

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