2110-2170 MHz, 59 W Avg., 48 V Airfast® RF Power GaN Transistor

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 500 mA, Pout = 59 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz18.037.07.0–33.3
2140 MHz18.036.97.0–33.3
2170 MHz18.137.06.9–32.3

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N true 0 PSPA3G20S350-01Sen 3 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1597335537616702034610 PSP 296.1 KB None None documents None 1597335537616702034610 /docs/en/data-sheet/A3G20S350-01S.pdf 296142 /docs/en/data-sheet/A3G20S350-01S.pdf A3G20S350-01S documents N N 2020-08-13 A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet /docs/en/data-sheet/A3G20S350-01S.pdf /docs/en/data-sheet/A3G20S350-01S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 10, 2020 980000996212993340 Data Sheet Y N A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Package Information Package Information 1 3 O English 1591964026041714427407 PSP 148.0 KB None None documents None 1591964026041714427407 /docs/en/package-information/SOT1828-3.pdf 148009 /docs/en/package-information/SOT1828-3.pdf sot1828-3 documents N N 2020-06-12 98ASA01061D /docs/en/package-information/SOT1828-3.pdf /docs/en/package-information/SOT1828-3.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 5, 2018 302435339416912908 Package Information Y N 98ASA01061D false 0 A3G20S350-01S downloads en true 1 Y PSP Y Y Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/A3G20S350-01S.pdf 2020-08-13 1597335537616702034610 PSP 1 Aug 10, 2020 Data Sheet A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A3G20S350-01S.pdf English documents 296142 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3G20S350-01S.pdf A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet /docs/en/data-sheet/A3G20S350-01S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3G20S350-01S 2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet 296.1 KB A3G20S350-01S N 1597335537616702034610 Package Information 1 /docs/en/package-information/SOT1828-3.pdf 2020-06-12 1591964026041714427407 PSP 3 Mar 5, 2018 Package Information None /docs/en/package-information/SOT1828-3.pdf English documents 148009 None 302435339416912908 2022-12-07 N /docs/en/package-information/SOT1828-3.pdf 98ASA01061D /docs/en/package-information/SOT1828-3.pdf documents 302435339416912908 Package Information N en None Y pdf O N N 98ASA01061D 148.0 KB sot1828-3 N 1591964026041714427407 true Y Products

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