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The A3T19H455W23S 81 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1990 MHz.

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Data Sheet

Application Notes

Product Details

Features

Advanced high performance in-package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

1990 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: V_DD = 30 Vdc, I_DQA = 540 mA, V_GSB = 0.6 Vdc, P_out = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1930 MHz	16.2	49.6	8.1	–31.0
1960 MHz	16.5	49.4	8.0	–32.1
1990 MHz	16.4	49.1	7.8	–32.6

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Documentation

Quick reference to our documentation types

4 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet[A3T19H455W23S]

PDFDec 22, 2017Rev 0

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

PDFJun 21, 2017Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

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4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A3T19H455W23S Peaking Class AB S-Parameters

S2PRev 0Dec 22, 2017 00:00:00133.25 KBA3T19H455W23S-Peaking-Class-AB

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Models
A3T19H455W23S Carrier S-Parameters

S2PRev 0Dec 22, 2017 00:00:00133.25 KBA3T19H455W23S-Carrier

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Models
A3T19H455W23S Peaking Class C S-Parameters

S2PRev 0Dec 22, 2017 00:00:00133.26 KBA3T19H455W23S-Peaking-Class-C

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Printed Circuit Boards and Schematics
A3T19H455W23S 1900 MHz PCB DXF file

ZIPRev 0Dec 22, 2017 00:00:0052.09 KBA3T19H455W23S-1900-PCB

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1930-1990 MHz, 81 W Avg., 30 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

1990 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet[A3T19H455W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00974D, ACP-1230S-4L2S

Design Resources

Design Files

Filter by

A3T19H455W23S Peaking Class AB S-Parameters

A3T19H455W23S Carrier S-Parameters

A3T19H455W23S Peaking Class C S-Parameters

A3T19H455W23S 1900 MHz PCB DXF file

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Support

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1930-1990 MHz, 81 W Avg., 30 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

1990 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet[A3T19H455W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00974D, ACP-1230S-4L2S

Design Resources

Design Files

Filter by

A3T19H455W23S Peaking Class AB S-Parameters

A3T19H455W23S Carrier S-Parameters

A3T19H455W23S Peaking Class C S-Parameters

A3T19H455W23S 1900 MHz PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

1930-1990 MHz, 81 W Avg., 30 V Airfast^® RF Power LDMOS Transistor