MRF6S20010N|1600-2200 MHz 10 W 28 V

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

Products
No Longer Manufactured
MRF6S20010N

Click image to open expanded view

The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.

Data Sheet

Documentation

Quick reference to our documentation types

1 documents

Compact List

ARCHIVED - MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet[MRF6S20010N]

PDFJan 24, 2014Rev 4

1600-2200 MHz, 10 W, 28 V, GSM/EDGE, N-CDMA, W-CDMA RF Power LDMOS Transistors

Documentation

Filter by

Data Sheet (1)

ARCHIVED - MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet[MRF6S20010N]

ARCHIVED - MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

Support

What do you need help with?

Suggested Links