MMRF1012N|10-450 MHz, 10 W, 50 V

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No Longer Manufactured
MMRF1012N

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The MMRF1012NR1 is designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in aerospace and defense applications.

Data Sheet

Application Notes

Documentation

Quick reference to our documentation types.

5 documents

^{Data Sheet}
MMRF1012NR1 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET - Data Sheet

PDFRev 0Jul 24, 20141.4 MBMMRF1012NEnglish
^{Application Note}
AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

PDFRev 1Apr 29, 2014112.4 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Engineering Bulletin}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English

10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET

Documentation

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MMRF1012NR1 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET - Data Sheet

AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

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