MMRF1012N|10-450 MHz, 10 W, 50 V

Overview

Archived content is no longer updated and is made available for historical reference only.

The MMRF1012NR1 is designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in aerospace and defense applications.

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Features

Typical CW Performance at 220 MHz: V_DD = 50 Vdc, I_DQ = 30 mA, Pout = 10 W
Power Gain: 23.9 dB

Drain Efficiency: 62%
Capable of Handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

MoreLess

Features

Typical CW Performance at 220 MHz: V_DD = 50 Vdc, I_DQ = 30 mA, Pout = 10 W
Power Gain: 23.9 dB

Drain Efficiency: 62%
Capable of Handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

Data Sheets

Application Notes

TO-270-2 Package Image

TO-270-2 Package Image

TO-270-2 Package Image

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MMRF1012N: 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET ARCHIVED

Overview

Features

Features

TO-270-2 Package Image

TO-270-2 Package Image