MMRF1012N|10-450 MHz, 10 W, 50 V

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No Longer Manufactured
MMRF1012N

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The MMRF1012NR1 is designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in aerospace and defense applications.

Data Sheet

Application Notes

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Documentation

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^{Data Sheet}
MMRF1012NR1 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET - Data Sheet

PDFRev 0Jul 24, 20141.4 MBMMRF1012NEnglish
^{Application Note}
AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

PDFRev 1Apr 29, 2014112.4 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Engineering Bulletin}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English

10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET

Design Resources

Documentation

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MMRF1012NR1 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET - Data Sheet

AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

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