For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

No Longer Manufactured
MMRF1318N

MMRF1318N: 10-600 MHz, 300 W CW, 50 V Broadband RF Power LDMOS Transistor ARCHIVED

Overview

Archived content is no longer updated and is made available for historical reference only.

The MMRF1318NR1 is designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in military and commercial CW and pulse applications, such as radio communications and radar.

Features

Characterized with series equivalent large-signal impedance parameters
Qualified for operation at 50 Vdc
Integrated ESD protection
Greater negative gate-source voltage range for improved Class C operation
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13-inch Reel.

Features

Characterized with series equivalent large-signal impedance parameters
Qualified for operation at 50 Vdc
Integrated ESD protection
Greater negative gate-source voltage range for improved Class C operation
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13-inch Reel.

Application Notes

TO-270WB-4 Package Image

TO-270WB-4 Package Image

TO-270WB-4 Package Image

TO-270WB-4 Package Image

TO-270WB-4 Package Image

.

RF Performance Table

Typical Performance

V_DD = 50 Vdc, T_A = 25°C

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
450	CW	300	22	60

Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 300 W CW Output Power