MMRF1318N|10-600 MHz, 300 W CW, 50 V

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MMRF1318N

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The MMRF1318NR1 is designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in military and commercial CW and pulse applications, such as radio communications and radar.

Data Sheet

Product Details

RF Performance Table

Typical Performance

V_DD = 50 Vdc, T_A = 25°C

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
450	CW	300	22	60

Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 300 W CW Output Power

Documentation

Quick reference to our documentation types.

1 documents

ARCHIVED - MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor Data Sheet[MMRF1318N]

PDFDec 17, 2014Rev 0

10-600 MHz, 300 W CW, 50 V Broadband RF Power LDMOS Transistor

Product Details

RF Performance Table

Typical Performance

Documentation

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Data Sheet (1)

ARCHIVED - MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor Data Sheet[MMRF1318N]

ARCHIVED - MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor Data Sheet

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